.-- e --- --- xf r = an amp company rf mosfet power transistor, 12ow, 28v 2 - 175 mhz DU28120T features n-channel enhancement mode device dmos structure lower capacitances for broadband operation high saturated output power lower noise figure than bipolar devices absolute maximum ratings at 25c parameter drain-source voltage gate-source voltage symbol v ds v c c rating units 65 v 20 v drain-source current i ?ds i 24 i * i power dissipation junction temperature storagetemperature thermal resistance pd 269 w tj 200 ?c t stg -55 to+150 ?c 8 jc 0.65 ?c/w letter - rmcs din m wi ml lax a 24.64 24.99 .970 se0 b lb29 1054 720 no i c i 2121 i 21.97 i 83.5 i 865 i i d i l2.60 i 1285 i a% i .506 i e 622 640 245 255 f ml 4s .tio .x0 g 5.33 559 210 220 h 10s x33 200 2lo 1 j 1 3.05 i 3.30 i d20 1 .lr) i electrical characteristics at 25c n .lo .ls input capacitance output capacitance reverse capacitance powergain drain efficiency c es c oss c rss gp ?id 270 pf v,,=28.0 v, f=l .o mhz 240 pf v,,=28.0 v, fz1.0 mhz 48 pf v,,=28.0 v, f=l .o mhz 13 - db vb,=28.0 v. i,,=600 ma, p,,,.=120.0 w, f=175 mhz 60 - % vbb~28.0 v, i,,=600 ma, po,?1 20.0 w, f=l75 mhz load mismatch tolerance vswr-t - 3o:l - v,,=28.0 v, i,,=600 ma, po,,-120.0 w, f=175 mhz specifications subject to change wiihout notice. mia-com, inc. north america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
rf mosfet power transistor, 12ow, 28v DU28120T v2.00 typical broadband performance curves 30 is s g 20 s 10 gain vs frequency v,,=28 v i,,=600 ma p, e120 w 0 50 150 200 frequency (mhz) power output vs power input 200 v,,=28 v i ,,=600 ma 30 mhz 100 mhz 175mhz 0.1 0.2 0.3 1 2 3 4 5 6 7 8 9 power input(w) efficiency vs frequency 70 . v,,=28 v i,,=600 ma poe120 w 50 0 25 50 100 150 175 2vo frequency (mhz) power output vs supply voltage f=175 mhz i,,=600 ma p,,=3.0 w 20 25 ?%i 33 supply voltage(v) specifications subject to change wiihout notice. mia-com, inc. north america: tel. (800) 3662266 a asia/pacific: tel. +81 (03) 3226-1671 = europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, 12ow, 28v DU28120T v2.00 typical device impedance frequency (mhz) 30 100 175 ?,a, (ohms) z load (ohms) 4.0 - j 8.0 3.4 + j 2.4 l.o-j2.5 2.2+j 1.3 1.0 - i 0.5 2.2 + i 0.0 vdd=28 v, i,,=600 ma, p,,,.=120 watts z,, is the series equivalent input impedance of the device from gate to source. z load is the series equivalent load impedance as measured from drain to ground. rf test fixture vds = 26 volts idq i 6ooma rf in jl cl - l3 rf out u 01 1 iy a nr tm tl-- - vgs j3 vds .i4 p cl0 cl2 ----i ii lc?i - - - - - - cl.c6 c2,c6 c3 c4,cll c7 c6.cs cl0 02 ll ,u l3.l4 rl.r2 ql board parts ust trimmer capacitor 6+opf capacitor sopf trimmer capacitor 4-+&f mon0lm-k circuit capacitor o.oluf trimmer capacitor s-16opf capacitor soopf capacitor 1ooopf eleci-rolmic capacitor 6ouf 60 volt no. 12 awg copper wire x 0.67 (loop 0.4?) 6 turns of no. 16 awg enamel wire on ?0.26?. close wound resistor 27k ohms 0.26 watt du26120t fr4 0.062 specifications subject to change without notice. mfa-com, inc. north america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
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